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Nexperia highlights the next-generation, 650-volt gallium nitride (GaN) technology for automotive, 5G, and datacenter applications. Nexperia has launched its second generation of GaN devices. Circuit design and PCB layout recommendations for GaN FET half bridges In Nexperia’s two-die GaN FET the freewheeling current does indeed flow in the body diode of a silicon MOSFET, but because the silicon MOSFET is a low voltage part, the injected charge is very small. Indicated in Fig. 2 are the current paths for three modes of operation.
Nexperia Gan 3
New player in gallium nitride technology. Nexperia is known for its discrete bipolar and MOSFET devices as well as analog and logic devices. With the introduction of the GaN device GAN063-650WSA, Nexperia officially announces its entry into the GaN (GaN) FET market. Nexperia GaN FETs When it comes to getting very high efficiency and high-power density, then 650 V GaN-on-Si FETs offer an ideal solution. These devices allow high frequency operation with high breakdown voltages and high current carrying capabilities. As a global expert for high performance Power FETs, Nexperia now introduces high-voltage devices with GaN-on-Silicon FET technology. With devices at 650 V a.
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Gallium Nitride Electronics
Nexperia Gan 2
Mesago Messe Frankfurt GmbH